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2SK3081 - N-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 10mΩ typ.
  • 4V gate drive devices.
  • High speed switching Outline TO.
  • 220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3081 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 30 ±20 45 180 45 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3081 Silicon N Channel MOS FET High Speed Power Switching ADE-208-636A (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange) 3. Source 2SK3081 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 30 ±20 45 180 45 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg Note2 75 150 –55 to +150 Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 ±20 — — 1.