Datasheet4U Logo Datasheet4U.com

2SK3147 - N-Channel MOSFET

Key Features

  • Low on-resistance R DS = 0.1 Ω typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline DPAK.
  • 2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3147(L),2SK3147(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3147 Silicon N-Channel Power MOSFET Renesas
2SK3147L Silicon N-Channel Power MOSFET Renesas
2SK3147S Silicon N-Channel Power MOSFET Renesas
2SK3147S Silicon N-Channel MOSFET Kexin
2SK3141 Silicon N-Channel MOS FET Renesas

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3147L N-Channel MOSFET
2SK3147S N-Channel MOSFET
2SK3140 N-Channel MOSFET
2SK3141 N-Channel MOSFET
2SK3142 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3147(L),2SK3147(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 5 20 5 5 2.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.