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2SK3147S - Silicon N-Channel Power MOSFET

Download the 2SK3147S datasheet PDF. This datasheet also covers the 2SK3147 variant, as both devices belong to the same silicon n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS = 0.1  typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK3147-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SK3147S
Manufacturer Renesas
File Size 138.56 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet 2SK3147S Datasheet

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Other Datasheets by Renesas

Part Number Description
2SK3147 Silicon N-Channel Power MOSFET
2SK3147L Silicon N-Channel Power MOSFET
2SK3141 Silicon N-Channel MOS FET
2SK3148 N-Channel MOSFET
2SK3107C N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet 2SK3147(L), 2SK3147(S) 100V, 5A, 0.13Ωmax. Silicon N Channel Power MOS FET High Speed Power Switching R07DS1254EJ0400 (Previous: REJ03G1072-0300) Rev.4.00 Mar 25, 2015 Features  Low on-resistance RDS = 0.1  typ.  High speed switching  4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 12 3 G D 1. Gate 2. Drain 3. Source 4. Drain 1 23 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1 % 2.