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2SK3147L - N-Channel MOSFET

Key Features

  • Low on-resistance R DS = 0.1 Ω typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline DPAK.
  • 2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3147(L),2SK3147(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage.

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📁 Similar Datasheet

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3147 N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3147(L),2SK3147(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 5 20 5 5 2.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.