Datasheet Summary
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-766(Z) Target specification 1st. Edition December 1998 Features
- Low on-resistance R DS(on) =6mΩ typ.
- Low drive current
- 4V gate drive device can be driven from 5V source
Outline
TO- 220CFM
G 1 2 3
1. Gate 2. Drain 3....