2SK3229 Overview
2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766(Z) Target specification 1st.
2SK3229 Key Features
- Low on-resistance R DS(on) =6mΩ typ
- Low drive current
- 4V gate drive device can be driven from 5V source
Datasheet Details
| Part number | 2SK3229 |
|---|---|
| Datasheet | 2SK3229_HitachiSemiconductor.pdf |
| File Size | 26.45 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | N-Channel MOSFET |
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