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2SK3229
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-766(Z) Target specification 1st. Edition December 1998 Features
• Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source
Outline
TO–220CFM
D
G 1 2 3
S
1. Gate 2. Drain 3. Source
2SK3229
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings 80 ±20 60 240 60 50 181 35 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR*
Pch* Tch Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
2SK3229 Datasheet
