2SK3229 Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766(Z) Target specification 1st.

Datasheet Details

Part number	2SK3229
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	26.45 KB
Description	N-Channel MOSFET
Datasheet	2SK3229_HitachiSemiconductor.pdf

Low on-resistance R DS(on) =6mΩ typ.
Low drive current.
4V gate drive device can be driven from 5V source Outline TO.
220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK3229 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D.

Part Number	Description
2SK322	N-Channel MOSFET
2SK3228	N-Channel MOSFET
2SK320	(2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
2SK320	(2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
2SK3207	N-Channel MOSFET
2SK3209	N-Channel MOSFET
2SK3211	N-Channel MOSFET
2SK3211L	N-Channel MOSFET
2SK3211S	N-Channel MOSFET
2SK3212	N-Channel MOSFET