6AM13 Datasheet | Hitachi Semiconductor

Features - Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = - 10 V, I D = - 5 A - Capable of 4 V gate drive - Low drive current - High speed switching - High density mounting - Suitable for H-bridged motor driver Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain P-ch Drain 4, 6, 11. P-ch Gate 5, 12. P-ch Source Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 6 devices operation Symbol VDSS VGSS ID I D(pulse)- I DR Pch (Tc = 25°C)- Pch- Tch Tstg 2 2 1 Nch 60 ±20 10 40 10 42 4.8 150 Pch - 60 ±20 - 10 - 40 - 10 Unit V V A A A W W °C °C - 55 to +150 Electrical Characteristics (Ta = 25°C) (1 Unit) N channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 - - 1.0 - - |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6 - - - - - -...