6AM13 Description
6AM13 Silicon N-Channel/P-Channel plementary Power MOS FET Array ADE-208-1217 (Z) 1st. 2001 Application High speed power switching.
6AM13 Key Features
- Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = -10 V, I D = -5 A
- Capable of 4 V gate drive
- Low drive current
- High speed switching
- High density mounting
- Suitable for H-bridged motor driver