6AM13 - Silicon N-Channel/P-Channel Complementary Power MOS FET Array

Datasheet Summary

Features

Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS =.
10 V, I D =.
5 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for H-bridged motor driver 6AM13 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain P-ch Drain 4.

Hitachi Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	6AM13
Manufacturer	Hitachi Semiconductor
File Size	65.22 KB
Description	Silicon N-Channel/P-Channel Complementary Power MOS FET Array
Datasheet	6AM13 Datasheet
Additional preview pages of the 6AM13 datasheet.

📁 Similar Datasheet

6AM11 - Silicon N-channel/p-channel Power MOS Fet Array (Renesas)
6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array (Renesas)

Other Datasheets by Hitachi Semiconductor

6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array
6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching

Full PDF Text Transcription

Click to expand full text

6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver 6AM13 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain P-ch Drain 4, 6, 11. P-ch Gate 5, 12.

Published: Apr 3, 2005 |