6AM15 Datasheet | Hitachi Semiconductor

Features - Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting - - - Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 6 Devices operation 3. Value at Ta = 25°C, Rg ≥ 50 Ω VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch (Tc = 25°C) Note2 Pch Note2 Tch Tstg 60 ±20 10 40 10 10 Pch - 60 ±20 - 10 - 40 - 10 - 10 8.5 42 4.8 150 - 55 to +150 V V A A A A m J W W °C °C Unit Electrical Characteristics (N Channel) (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Symbol Min Typ - - - - - 0.045 0.070 9 500 260 110 10 Max - - ±10 10 2.5 0.060 0.115 - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns Test Conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, I D = 1 m A ID = 5 A, VGS = 10 V Note5 ID = 5 A, VGS = 4 V Note5 ID = 5 A, VDS = 10 V Note5 VDS = 10 V VGS = 0 f = 1 MHz VGS =10 V, ID = 5 A V(BR)DS 60 S V(BR)GS ±20 S IGSS IDSS - - VGS(off) 1.5 RDS(on) - RDS(on) - |yfs| Ciss Coss Crss td(on) 5.5 - - - - Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 5. Pulse test tr td(off) tf VDF trr - - - - - 50 90 100 0.9 52 - - - - - ns ns ns V ns IF =10 A, VGS = 0 IF =10 A, VGS = 0 di F/ dt = 50A/ µs RL = 6 Ω Electrical Characteristics (P Channel) (Ta =...