6AM15 Description
6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st.
6AM15 Key Features
- Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate dr
- Outline
- Part: 6AM15
- Manufacturer: Hitachi Semiconductor
- Size: 236.53 KB
Related Hitachi Semiconductor Datasheets
| Part Number | Description |
|---|---|
| 6AM13 | Silicon N-Channel/P-Channel Complementary Power MOS FET Array |
| 6AM14 | Silicon N-Channel/P-Channel Power MOS FET Array |