6AM15 - Silicon N/P Channel MOS FET High Speed Power Switching

Datasheet Summary

Features

Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting.
Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Chann.

Hitachi Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	6AM15
Manufacturer	Hitachi Semiconductor
File Size	236.53 KB
Description	Silicon N/P Channel MOS FET High Speed Power Switching
Datasheet	6AM15 Datasheet
Additional preview pages of the 6AM15 datasheet.

📁 Similar Datasheet

6AM11 - Silicon N-channel/p-channel Power MOS Fet Array (Renesas)
6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array (Renesas)

Other Datasheets by Hitachi Semiconductor

6AM13 - Silicon N-Channel/P-Channel Complementary Power MOS FET Array
6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array

Full PDF Text Transcription

Click to expand full text

6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density mounting • • • Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 6 Devices operation 3.

Published: Apr 3, 2005 |