6AM15 Overview
6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st.
6AM15 Key Features
- Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate dr
- Outline
Datasheet Details
| Part number | 6AM15 |
|---|---|
| Datasheet | 6AM15_HitachiSemiconductor.pdf |
| File Size | 236.53 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N/P Channel MOS FET High Speed Power Switching |
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