6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array

Datasheet Summary

Features

Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at 6 Drive operation Symbol VDSS VGSS ID ID(pulse).
1 IDR Pch.
2 Pch.
2 Tch T.

Hitachi Semiconductor

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Datasheet Details

Part number	6AM14
Manufacturer	Hitachi Semiconductor
File Size	62.38 KB
Description	Silicon N-Channel/P-Channel Power MOS FET Array
Datasheet	6AM14 Datasheet
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6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at 6 Drive operation Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Pch*2 Tch Tstg Nch 60 ±20 7 28 7 42 4.

Published: Apr 3, 2005 |