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6AM14 - Silicon N-Channel/P-Channel Power MOS FET Array

Key Features

  • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at 6 Drive operation Symbol VDSS VGSS ID ID(pulse).
  • 1 IDR Pch.
  • 2 Pch.
  • 2 Tch T.

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📁 Similar Datasheet

Part Number Description Manufacturer
6AM11 Silicon N-channel/p-channel Power MOS Fet Array Renesas
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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array
6AM15 Silicon N/P Channel MOS FET High Speed Power Switching

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6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at 6 Drive operation Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Pch*2 Tch Tstg Nch 60 ±20 7 28 7 42 4.