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HAF1001 Datasheet

Manufacturer: Hitachi Semiconductor (now Renesas)

HAF1001 datasheet preview

Datasheet Details

Part number	HAF1001
Datasheet	HAF1001_HitachiSemiconductor.pdf
File Size	53.90 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	P-Channel MOSFET

HAF1001 Overview

HAF1001 Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut down Capability ADE-208-583 A (Z) 2nd Edition October 1997.

HAF1001 Key Features

Logic level operation (-4 to -6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shut-down circuit
Latch type shut-down operation (Need 0 voltage recovery)

More Datasheets from Hitachi Semiconductor (now Renesas)

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Part Number	Description
HAF1002	P-Channel MOSFET
HAF1002L	P-Channel MOSFET
HAF1002S	P-Channel MOSFET
HAF2001	Silicon N Channel MOS FET Series Power Switching
HAF2002	Silicon N Channel MOS FET Series Power Switching
HAF2005	Silicon N Channel MOS FET Series Power Switching
HAF2007	Silicon N Channel MOS FET Series Power Switching
HAF2007L	Silicon N Channel MOS FET Series Power Switching
HAF2007S	Silicon N Channel MOS FET Series Power Switching
HAF2011	Silicon N Channel MOS FET Series Power Switching

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