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HAF1001 - P-Channel MOSFET

Key Features

  • This FET has the over temperature shut.
  • down capability sensing to the junction temperature. This FET has the built.
  • in over temperature shut.
  • down circuit in the gate area. And this circuit operation to shut.
  • down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
  • Logic level operation (.
  • 4 to.
  • 6 V Gate drive).
  • High endurance capability against to the short circuit.

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Full PDF Text Transcription for HAF1001 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HAF1001. For precise diagrams, and layout, please refer to the original PDF.

HAF1001 Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability ADE-208-583 A (Z) 2nd Edition October 1997 Features This FET has the over...

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-208-583 A (Z) 2nd Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

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