Full PDF Text Transcription for HAF1002L (Reference)
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HAF1002L. For precise diagrams, and layout, please refer to the original PDF.
HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temperature shut–down cap...
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October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. • Logic level operation (–4 to –6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline LDPAK D 4 4 G Gate resistor Tempe– rature Sencing Circuit 1 1 2
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HAF1002L Datasheet
