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HAF2001 Datasheet Silicon N Channel Mos Fet Series Power Switching

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353 D (Z) 5th.

HAF2001 datasheet preview

Datasheet Details

Part number	HAF2001
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	54.86 KB
Description	Silicon N Channel MOS FET Series Power Switching
Datasheet	HAF2001_HitachiSemiconductor.pdf

Key Features

This FET has the over temperature shut.
down capability sensing to the junction temperature. This FET has the built.
in over temperature shut.
down circuit in the gate area. And this circuit operation to shut.
down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Logic level operation (4 to 6 V Gate drive).
High endurance capability against to the short circuit.
Built.
in t.

More Datasheets from Hitachi Semiconductor (now Renesas)

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