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HAF2007L Datasheet Silicon N Channel Mos Fet Series Power Switching

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-706 (Z) 1st. Edition Dec. 1998 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Key Features

  • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built.
  • in the over temperature shut.
  • down circuit Latch type shut.
  • down operation (Need 0 voltage recovery) Outline DPAK.
  • 2 2, 4 D 4 4 1 G Gate resistor Tempe.
  • rature Sencing Circuit Latch Circuit Gate Shut.
  • down Circuit 1 2 S 3 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain HAF2007(L), HAF2007(S) Absolute Ma.

More Datasheets from Hitachi Semiconductor (now Renesas)

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