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HAF2007S - Silicon N Channel MOS FET Series Power Switching

Key Features

  • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built.
  • in the over temperature shut.
  • down circuit Latch type shut.
  • down operation (Need 0 voltage recovery) Outline DPAK.
  • 2 2, 4 D 4 4 1 G Gate resistor Tempe.
  • rature Sencing Circuit Latch Circuit Gate Shut.
  • down Circuit 1 2 S 3 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain HAF2007(L), HAF2007(S) Absolute Ma.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HAF2007 Silicon N Channel MOS FET Series Power Switching
HAF2007L Silicon N Channel MOS FET Series Power Switching
HAF2001 Silicon N Channel MOS FET Series Power Switching
HAF2002 Silicon N Channel MOS FET Series Power Switching
HAF2005 Silicon N Channel MOS FET Series Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAF2007(L), HAF2007(S) Silicon N Channel MOS FET Series Power Switching Target specification ADE-208-706 (Z) 1st. Edition Dec. 1998 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.