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HAF2005 Datasheet Silicon N Channel Mos Fet Series Power Switching

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAF2005 Silicon N Channel MOS FET Series Power Switching ADE-208-688 (Z) Target specification 1st. Edition Nov. 1998 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Key Features

  • Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built.
  • in the over temperature shut.
  • down circuit Latch type shut.
  • down operation (Need 0 voltage recovery) Outline TO.
  • 220FM D G Gate resistor Tempe.
  • rature Sencing Circuit Latch Circuit Gate Shut.
  • down Circuit 1 2 S 3 1. Gate 2. Drain 3. Source HAF2005 Absolute Maximum Ratings (Ta = 25°C) Item Drain to s.

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