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HAT2051T Datasheet Silicon N-channel Power MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAT2051T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-661A (Z) 2nd.

Key Features

  • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP.
  • 8 65 34 87 1 D 8 D 12 4 G 5 G S S 2 3 S S 6 7 MOS1 MOS2 1, 8 Drain 2, 3, 6, 7 Source 4, 5 Gate HAT2051T Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temper.

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