HB56D836SBR - High Density Dynamic RAM Module

This page provides the datasheet information for the HB56D836SBR, a member of the HB56D836BR High Density Dynamic RAM Module family.

Product Overview

Hitachi Semiconductor

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Datasheet Details

Part number	HB56D836SBR
Manufacturer	Hitachi Semiconductor
File Size	278.09 KB
Description	High Density Dynamic RAM Module
Datasheet	HB56D836SBR Datasheet
Additional preview pages of the HB56D836SBR datasheet.

HB56D836SBR Product details

Description

The HB56D836BR/SBR is a 8M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package.

Features

72-pin single in-line package  Outline: 107.95 mm (Length) × 31.75/25.40 mm (Height) × 9.14 mm (Thickness)  Lead pitch: 1.27 mm.
Single 5 V (±5%) supply.
High speed  Access time: tRAC = 60/70ns (max).
Low power dissipation  Active mode: 6.41/5.78 W (max) (HB56D836BR/SBR Series) 6.09/5.46 W (max) (HB56D436BR/SBR Series)  Standby mode (TTL): 252 mW (max) (HB56D836BR/SBR Series) (TTL): 126 mW (max) (HB56D436BR/SBR Series) (CMOS): 16.8 mW (max) (L-version) (.

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Published: Oct 10, 2015 |