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HB56D836SBR Datasheet High Density Dynamic RAM Module

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HB56D836BR/SBR Series, HB56D436BR/SBR Series 8,388,608-word × 36-bit High Density Dynamic RAM Module 4,194,304-word × 36-bit High Density Dynamic RAM Module ADE-203-729A (Z) Rev.1.0 Feb.

Download the HB56D836SBR datasheet PDF. This datasheet also includes the HB56D836BR variant, as both parts are published together in a single manufacturer document.

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General Description

The HB56D836BR/SBR is a 8M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package.

The HB56D436BR/SBR is a 4M × 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package.

An outline of the HB56D836BR/SBR, HB56D436BR/SBR is 72-pin single in-line package.

Key Features

  • 72-pin single in-line package  Outline: 107.95 mm (Length) × 31.75/25.40 mm (Height) × 9.14 mm (Thickness)  Lead pitch: 1.27 mm.
  • Single 5 V (±5%) supply.
  • High speed  Access time: tRAC = 60/70ns (max).
  • Low power dissipation  Active mode: 6.41/5.78 W (max) (HB56D836BR/SBR Series) 6.09/5.46 W (max) (HB56D436BR/SBR Series)  Standby mode (TTL): 252 mW (max) (HB56D836BR/SBR Series) (TTL): 126 mW (max) (HB56D436BR/SBR Series) (CMOS): 16.8 mW (max) (L-version) (.

More Datasheets from Hitachi Semiconductor (now Renesas)

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