HD155111F Datasheet | Hitachi Semiconductor

Description The HD155111F was developed for PCN (DCS1800) cellular systems, and integrates most of the functions of a transceiver. The HD155111F incorporates the bias circuit for a RF LNA, a 1st mixer, 1st-IF amplifier, 2nd mixer, AGC amplifier and an IQ quadrature demodulator for the receiver, and an IQ quadrature modulator and offset PLL for the transmitter. Also, on chip are the dividers for the 1st & 2nd local oscillator signals and 90˚ phase splitter. Moreover the HD155111F includes control circuits to implement power saving modes. These functions can operate down to 2.7 V and are housed in a 48-pin LQFP SMD package. Hence the HD155111F can form a small size transceiver handset for PCN by adding a PLL frequency synthesizer IC, a power amplifier and some external ponents. See page 7 “Configuration”. The HD155111F is fabricated using a 0.6 µm double-polysilicon Bi-CMOS process. Functions Receiver (RX) - - - - - - Low Noise Amplifier (LNA) bias circuit 1st mixer IF amplifier 2nd mixer Automatic gain control amplifier (AGC) IQ demodulator with 90° phase splitter Transmitter (TX) - IQ modulator with 90° phase splitter - Offset PLL  Down converter  Phase parator  TX VCO driver Others - IF dividers - Power saving circuit - IFVCO Features - Highly integrated RF processing for hand-portables - Wide operating frequency RX:  RF: 1805 to 1880 MHz  1st IF: 130 to 300 MHz  2nd IF: 26 to 60 MHz TX:  RF: 1710 to 1785 MHz  IF: 120 to 180 MHz - Offset PLL architecture reduces TX spurious - Low current consumption (Vcc = 3 V) RX mode: 42.5 m A Typ (including IFVCO current (2.5 m A Typ)) + LNA transistor current (5.6 m A Typ) TX mode: 38.0 m A Typ (including IFVCO current (2.5 m A Typ)) Idle mode: 1 µA Typ - Operating supply voltage:  Phase parator and TX VCO driver circuits: 2.7 to 5.25 V  Other blocks: 2.7 to 3.6 V - Operating temperature range: - 20 to +75°C - 48 pin SMD Low Profile Quad Flat Package (LQFP): FP-48 Pin Arrangement The HD155111F is...