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HM621400H - 4M High Speed SRAM (4-Mword x 1-bit)

Datasheet Summary

Description

The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology.

Features

  • Single 5.0 V supply : 5.0 V ± 10 %.
  • Access time 10/12/15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 200/180/160 mA (max).
  • TTL standby current: 70/60/50 mA (max).
  • CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version).
  • Data retension current: 0.8 mA (max) (L-version).
  • Data re.

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Datasheet Details

Part number HM621400H
Manufacturer Hitachi Semiconductor
File Size 73.69 KB
Description 4M High Speed SRAM (4-Mword x 1-bit)
Datasheet download datasheet HM621400H Datasheet
Additional preview pages of the HM621400H datasheet.

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Full PDF Text Transcription

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HM621400H Series 4M High Speed SRAM (4-Mword × 1-bit) ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM621400H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.
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