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HM621400H

Manufacturer: Hitachi Semiconductor (now Renesas)

HM621400H datasheet by Hitachi Semiconductor (now Renesas).

HM621400H datasheet preview

HM621400H Datasheet Details

Part number HM621400H
Datasheet HM621400H_HitachiSemiconductor.pdf
File Size 73.69 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description 4M High Speed SRAM (4-Mword x 1-bit)
HM621400H page 2 HM621400H page 3

HM621400H Overview

The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.

HM621400H Key Features

  • Single 5.0 V supply : 5.0 V ± 10 %
  • Access time 10/12/15 ns (max)
  • pletely static memory  No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL patible  All inputs and outputs
  • Operating current: 200/180/160 mA (max)
  • TTL standby current: 70/60/50 mA (max)
  • CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version)
  • Data retension current: 0.8 mA (max) (L-version)
  • Data retension voltage: 2 V (min) (L-version)
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HM621400H Distributor

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