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HM621400HC Datasheet 4m High Speed Sram (4-mword X 1-bit)

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HM621400HC Series 4M High Speed SRAM (4-Mword × 1-bit) ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov.

General Description

The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology.

It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system.

Key Features

  • Single 5.0 V supply: 5.0 V ± 10 %.
  • Access time: 10 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 140 mA (max).
  • TTL standby current: 40 mA (max).
  • CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version).
  • Data retension current: 0.8 mA (max) (L-version).
  • Data retension voltage: 2 V.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
HM621400H 4M High Speed SRAM (4-Mword x 1-bit)
HM6216255H 4M high Speed SRAM (256-kword x 16-bit)
HM6216255HC 4M High Speed SRAM (256-kword x 16-bit)
HM6216255HI 4M high Speed SRAM (256-kword x 16-bit)
HM621664HB 1M High Speed SRAM
HM6208H High Speed CMOS Static RAM
HM62256A 32/768-word x 8-bit High Speed CMOS Static RAM
HM62256B 256k SRAM (32-kword x 8-bit)
HM624100H 4M High Speed SRAM (1-Mword x 4-bit)
HM624100HC 4M High Speed SRAM (1-Mword x 4-bit)

HM621400HC Distributor