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HM628511H Datasheet 4m High Speed Sram (512-kword X 8-bit)

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HM628511H Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-762D (Z) Rev. 1.0 Sep.

General Description

The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology.

It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.

Key Features

  • Single 5.0 V supply : 5.0 V ± 10 %.
  • Access time 10 /12 /15 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current : 180 / 160 / 140 mA (max).
  • TTL standby current : 70 / 60 / 50 mA (max).
  • CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version).
  • Data retension current: 0.8 mA (max) (L-version).

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
HM628511HC 4M High Speed SRAM (512-kword x 8-bit)
HM628511HI 4M High Speed SRAM (512-kword x 8-bit)
HM628512 4 M SRAM (512-kword x 8-bit)
HM628512A 4M SRAM (512 KWORD X 8 BIT)
HM628512AI 524288 x 8-Bit High Speed CMOS SRAM
HM628512B 4 M SRAM (512-kword x 8-bit)
HM628512BFP 4 M SRAM (512-kword x 8-bit)
HM628512BI 4 M SRAM (512-kword x 8-bit)
HM628512C 4 M SRAM (512-kword x 8-bit)
HM628512CI Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)

HM628511H Distributor