HM628511H - 4M High Speed SRAM (512-kword x 8-bit)

Product Overview

Hitachi Semiconductor

Datasheet Details

Part number	HM628511H
Manufacturer	Hitachi Semiconductor
File Size	75.31 KB
Description	4M High Speed SRAM (512-kword x 8-bit)
Datasheet	HM628511H Datasheet
Additional preview pages of the HM628511H datasheet.

HM628511H Product details

Description

The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit.

It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology.

Features

Single 5.0 V supply : 5.0 V ± 10 %.
Access time 10 /12 /15 ns (max).
Completely static memory  No clock or timing strobe required.
Equal access and cycle times.
Directly TTL compatible  All inputs and outputs.
Operating current : 180 / 160 / 140 mA (max).
TTL standby current : 70 / 60 / 50 mA (max).
CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version).
Data retension current: 0.8 mA (max) (L-version).

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Published: Mar 26, 2005 |