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HM628511HC

Manufacturer: Hitachi Semiconductor (now Renesas)

HM628511HC datasheet by Hitachi Semiconductor (now Renesas).

HM628511HC datasheet preview

HM628511HC Datasheet Details

Part number HM628511HC
Datasheet HM628511HC_HitachiSemiconductor.pdf
File Size 69.39 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description 4M High Speed SRAM (512-kword x 8-bit)
HM628511HC page 2 HM628511HC page 3

HM628511HC Overview

The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.

HM628511HC Key Features

  • Single 5.0 V supply: 5.0 V ± 10 %
  • Access time: 10 ns (max)
  • pletely static memory  No clock or timing strobe required
  • Equal access and cycle times
  • Directly TTL patible  All inputs and outputs
  • Operating current: 140 mA (max)
  • TTL standby current: 40 mA (max)
  • CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version)
  • Data retension current: 0.8 mA (max) (L-version)
  • Data retension voltage: 2 V (min) (L-version)
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