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HM628511HC - 4M High Speed SRAM (512-kword x 8-bit)

General Description

The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology.

Key Features

  • Single 5.0 V supply: 5.0 V ± 10 %.
  • Access time: 10 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 140 mA (max).
  • TTL standby current: 40 mA (max).
  • CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version).
  • Data retension current: 0.8 mA (max) (L-version).
  • Data retension voltage: 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM628511HC Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-1197 (Z) Preliminary Rev. 0.0 Nov. 9, 2000 Description The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400mil 36-pin plastic SOJ. Features • Single 5.0 V supply: 5.