Datasheet4U Logo Datasheet4U.com

HM628511HC Datasheet 4m High Speed Sram (512-kword X 8-bit)

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HM628511HC Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-1197 (Z) Preliminary Rev. 0.0 Nov.

General Description

The HM628511HC Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology.

It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.

Key Features

  • Single 5.0 V supply: 5.0 V ± 10 %.
  • Access time: 10 ns (max).
  • Completely static memory  No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible  All inputs and outputs.
  • Operating current: 140 mA (max).
  • TTL standby current: 40 mA (max).
  • CMOS standby current : 5 mA (max) : 1.2 mA (max) (L-version).
  • Data retension current: 0.8 mA (max) (L-version).
  • Data retension voltage: 2.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
HM628511H 4M High Speed SRAM (512-kword x 8-bit)
HM628511HI 4M High Speed SRAM (512-kword x 8-bit)
HM628512 4 M SRAM (512-kword x 8-bit)
HM628512A 4M SRAM (512 KWORD X 8 BIT)
HM628512AI 524288 x 8-Bit High Speed CMOS SRAM
HM628512B 4 M SRAM (512-kword x 8-bit)
HM628512BFP 4 M SRAM (512-kword x 8-bit)
HM628512BI 4 M SRAM (512-kword x 8-bit)
HM628512C 4 M SRAM (512-kword x 8-bit)
HM628512CI Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)

HM628511HC Distributor