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HSB0104YP - Silicon Schottky Barrier Diode for High Speed Switching

Key Features

  • Can be used for protection of signal-bus lines.
  • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package. Ordering Information Type No. HSB0104YP Laser Mark E4 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB0104YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Sto.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730(Z) Rev 0 Dec. 1998 Features • Can be used for protection of signal-bus lines. • The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package. Ordering Information Type No. HSB0104YP Laser Mark E4 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB0104YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Symbol VRRM Io *1 Value 40 100 Unit V mA A °C °C IFSM Tj *2 3 125 -55 to +125 Tstg 1. Per one device 2.