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HSB226YP - Silicon Schottky Barrier Diode

Key Features

  • Low reverse current, Low capacitance.
  • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB226YP Laser Mark E5 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB226YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Symbol VRRM Value 25 200 50 12.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSB226YP Silicon Schottky Barrier Diode ADE-208-842(Z) Rev. 0 Mar. 2000 Features • Low reverse current, Low capacitance. • CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB226YP Laser Mark E5 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB226YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Symbol VRRM Value 25 200 50 125 -55 to +125 Unit V mA mA °C °C IFSM *1*2 I F*2 Tj Tstg Notes: 1. 10msec sine wave 1 pulse Notes: 2.