HSB226YP Datasheet Silicon Schottky Barrier Diode

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HSB226YP Silicon Schottky Barrier Diode ADE-208-842(Z) Rev. 0 Mar.

Datasheet Details

Part number	HSB226YP
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	23.52 KB
Description	Silicon Schottky Barrier Diode
Datasheet	HSB226YP_HitachiSemiconductor.pdf

Low reverse current, Low capacitance.
CMPAK-4 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB226YP Laser Mark E5 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB226YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current forward current Junction temperature Storage temperature Symbol VRRM Value 25 200 50 12.

Part Number	Description
HSB276AS	Silicon Schottky Barrier Diode for Balanced Mixer
HSB276S	Silicon Schottky Barrier Diode for Balanced Mixer
HSB278S	Silicon Schottky Barrier Diode for High Speed Switching
HSB0104YP	Silicon Schottky Barrier Diode for High Speed Switching
HSB124	Silicon Epitaxial Planar Diode for High Speed Switching
HSB124S	Silicon Epitaxial Planar Diode for High Speed Switching
HSB83	Silicon Epitaxial Planar Diode for High Voltage Switching
HSB83YP	Silicon Epitaxial Planar Diode for High Voltage Switching