HSB276S Datasheet Silicon Schottky Barrier Diode For Balanced Mixer

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HSB276S Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-780 (Z) Rev 0 Mar.

Datasheet Details

Part number	HSB276S
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	27.19 KB
Description	Silicon Schottky Barrier Diode for Balanced Mixer
Datasheet	HSB276S_HitachiSemiconductor.pdf

High forward current, Low capacitance.
HSB276S which is interconnected in series configuration is designed for balanced mixer use.
CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSB276S Laser Mark C2 Package Code CMPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSB276S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction tempera.

Part Number	Description	Manufacturer
HSB276S	Silicon Schottky Barrier Diode	Kexin
HSB276S	Silicon Schottky Barrier Diode	Renesas
HSB276AS	Silicon Schottky Barrier Diode	Renesas
HSB276AS	Silicon Schottky Barrier Diode	Kexin

Part Number	Description
HSB276AS	Silicon Schottky Barrier Diode for Balanced Mixer
HSB278S	Silicon Schottky Barrier Diode for High Speed Switching
HSB226YP	Silicon Schottky Barrier Diode
HSB0104YP	Silicon Schottky Barrier Diode for High Speed Switching
HSB124	Silicon Epitaxial Planar Diode for High Speed Switching
HSB124S	Silicon Epitaxial Planar Diode for High Speed Switching
HSB83	Silicon Epitaxial Planar Diode for High Voltage Switching
HSB83YP	Silicon Epitaxial Planar Diode for High Voltage Switching