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HSB276S - Silicon Schottky Barrier Diode

Key Features

  • High forward current, Low capacitance. HSB276S which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r R e v e r s e v o lt a g e A v e r a g e r e c t if ie d c u r r e n t J u n c t io n t e m p e r a t u r e S to ra g e te m p e ra tu re S ym bol VR IO Tj T s tg V a lu e 3 30 125 -5 5 to + 1 2 5 U n it V mA Electr.

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Part Number Description Manufacturer
HSB276S Silicon Schottky Barrier Diode for Balanced Mixer Hitachi Semiconductor
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Other Datasheets by Kexin Semiconductor

Part Number Description
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SMD Type Silicon Schottky Barrier Diode HSB276S Diodes Features High forward current, Low capacitance. HSB276S which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu t e M a x im u m R a t in g s T a = 2 5 P a ra m e te r R e v e r s e v o lt a g e A v e r a g e r e c t if ie d c u r r e n t J u n c t io n t e m p e r a t u r e S to ra g e te m p e ra tu re S ym bol VR IO Tj T s tg V a lu e 3 30 125 -5 5 to + 1 2 5 U n it V mA Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability (Note 1) Note 1. Failure criterion ; IR 100 A at V R =0.5 V Symbol VF IR IF C ÄC Conditions IF =1.