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HSC226 - Silicon Schottky Barrier Diode

Key Features

  • Low reverse current, Low capacitance.
  • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC226 Laser Mark S4 Package Code UFP Outline Cathode mark Mark 1 S4 2 1. Cathode 2. Anode HSC226 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction temperature Storage temperature Note: 10ms Sinewave 1pulse Symbol VRRM Value 25 200 50 125.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSC226 Silicon Schottky Barrier Diode ADE-208-831A (Z) Rev. 1 Aug. 2000 Features • Low reverse current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC226 Laser Mark S4 Package Code UFP Outline Cathode mark Mark 1 S4 2 1. Cathode 2. Anode HSC226 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction temperature Storage temperature Note: 10ms Sinewave 1pulse Symbol VRRM Value 25 200 50 125 −55 to +125 Unit V mA mA °C °C IFSM * IF Tj Tstg Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance IR C Min — — — — Typ — — — — Max 0.33 0.38 0.45 2.