Datasheet4U Logo Datasheet4U.com

HSC226 - Silicon Schottky Barrier Diode

Key Features

  • Low reverse current, Low capacitance.
  • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC226 Cathode Mark S4 Package Name UFP Package Code PWSF0002ZA-A Pin Arrangement Cathode mark Mark 1 S4 2 1. Cathode 2. Anode Rev.3.00 Sep 15, 2006 page 1 of 4 Free Datasheet http://www. datasheet4u. com/ HSC226 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current For.

📥 Download Datasheet

Datasheet Details

Part number HSC226
Manufacturer Renesas
File Size 79.49 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet HSC226 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HSC226 Silicon Schottky Barrier Diode Hitachi Semiconductor
HSC226 Silicon Schottky Barrier Diode SEMTECH
HSC226 Silicon Schottky Barrier Diode Kexin
HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
HSC2240 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Other Datasheets by Renesas

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HSC226 Silicon Schottky Barrier Diode for High Speed Switching REJ03G0599-0300 Rev.3.00 Sep 15, 2006 Features • Low reverse current, Low capacitance. • Ultra small Flat Lead Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC226 Cathode Mark S4 Package Name UFP Package Code PWSF0002ZA-A Pin Arrangement Cathode mark Mark 1 S4 2 1. Cathode 2. Anode Rev.3.00 Sep 15, 2006 page 1 of 4 Free Datasheet http://www.datasheet4u.