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HSC226 - Silicon Schottky Barrier Diode

Key Features

  • + - +0.1 1.6-0.1 0.77max 0.07max Absolute M axim um Ratings Ta = 25 Param eter Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction tem perature Storage tem perature Note 10m s Sinewave 1pulse Sym bol V RRM I FSM.
  • IF Tj T stg Value 25 200 50 125 -55 to +125 Unit V mA mA Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Capacitance Sym bol VF IR C Conditions IF = 1 m A IF = 5 m A V R = 20 V V R =1 V, f = 1 M Hz.

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SMD Type Silicon Schottky Barrier Diode HSC226 Diodes SOD-523 +0.05 0.3-0.05 +0.1 1.2-0.1 Unit: mm +0.1 0.6-0.1 Low reverse current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design. +0.05 0.8-0.05 Features + - +0.1 1.6-0.1 0.77max 0.07max Absolute M axim um Ratings Ta = 25 Param eter Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction tem perature Storage tem perature Note 10m s Sinewave 1pulse Sym bol V RRM I FSM * IF Tj T stg Value 25 200 50 125 -55 to +125 Unit V mA mA Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Capacitance Sym bol VF IR C Conditions IF = 1 m A IF = 5 m A V R = 20 V V R =1 V, f = 1 M Hz M in Typ M ax 0.33 0.38 0.45 2.