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HSM107 - Silicon Schottky Barrier Diode for System Protection

Key Features

  • Low VF and high efficiency.
  • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems.
  • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM107S Laser Mark C5 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM107S Absolute Maximum Ratings (Ta = 25°C).

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HSM107S Silicon Schottky Barrier Diode for System Protection
HSM124S Silicon Epitaxial Planar Diode for Switching
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSM107S Silicon Schottky Barrier Diode for System Protection ADE-208-058F(Z) Rev 6 Sep. 1998 Features • Low VF and high efficiency. • HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems. • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM107S Laser Mark C5 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM107S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Peak forward current Non-Repetitive Peak forward surge current Average forward current Junction temperature Storage temperature Symbol VR I FM I FSM IO Tj Tstg *1 Value 8 0.1 0.