HSM107S
HSM107S is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- Low VF and high efficiency.
- HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems.
- MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM107S
Laser Mark C5
Package Code MPAK
Pin Arrangement
(Top View)
1. Cathode 2 2. Anode 1 3. Cathode 1
Anode 2
Rev.7.00, Jan.28.2004, page 1 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Notes: 1. Rectangular wave, 10 ms
2. Per one device
Symbol
IFM IFSM
- 1
- 2 Tj Tstg
Value
Unit
50 m A
°C
- 55 to +125
°C
Electrical Characteristics
- 1
(Ta = 25°C)
Item Reverse voltage Reverse current Forward voltage ESD Capability
- 2
Symbol Min Typ...
