HSM107S
HSM107S is Silicon Schottky Barrier Diode manufactured by Kexin Semiconductor.
Features
Low VF and high efficiency. HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems. MPAK package is suitable for high density surface mounting and high speed assembly.
+0.1 2.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
0.95+0.1 -0.1 1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Reverse voltage Peak forward current Non-Repetitive Peak forward surge current Average rectified current Junction temperature Storage temperature Note 1. Square wave, 10ms
Symbol
Value
Unit
IFSM (Note 1)
50 m A
Tj
Tstg
-55 to +125
0-0.1 +0.1 0.38
-0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Electrical Characteristics Ta = 25
Parameter Reverse voltage Reverse current Forward voltage
ESD-Capability (Note 1)
Note 1. Failure criterion ; IR 60
Symbol VR IR VF
Conditions VR =1.0 m...
