HSM107S
HSM107S is Silicon Schottky Barrier Diode for System Protection manufactured by Hitachi Semiconductor.
Features
- Low VF and high efficiency.
- HSM107S which is interconnected in series configuration is designed for protection from not only external excessive voltage but also miss-operation on electric systems.
- MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM107S Laser Mark C5 Package Code MPAK
Outline
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Peak forward current Non-Repetitive Peak forward surge current Average forward current Junction temperature Storage temperature Symbol VR I FM I FSM IO Tj Tstg
- 1
Value 8 0.1 0.5 50 125
- 55 to +125
Unit V A A m A °C °C
Notes: 1. Square wave, 10ms
Electrical Characteristics (Ta = 25°C)
Item Reverse voltage Reverse current Forward voltage ESD Capability
- 1
Symbol VR IR VF
- Min 8
- - 100
Typ
- -
- -
Max
- 30 0.3
- Unit
- µA V V
Test Condition I R = 1.0 m A VR = 5 V I F = 10 m A C=200p F, Both forward and reverse direction 1 pulse
Notes: 1. Failure Criterion ; IR ≥60µA at V R =5V
Main Characteristic
-2
10-1
-2...
