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HSU119 - Silicon Epitaxial Planar Diode for High Speed Switching

Key Features

  • Low capacitance. (C = 2.0pF max).
  • Short reverse recovery time. (trr = 3.0ns max).
  • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU119 Laser Mark H1 Package Code URP Outline Cathode mark Mark 1 H1 2 1. Cathode 2. Anode HSU119 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average forward current Peak rectified current Non-Repetitive peak forward.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSU119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-444(Z) Rev 0 Feb. 1997 Features • Low capacitance. (C = 2.0pF max) • Short reverse recovery time. (trr = 3.0ns max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU119 Laser Mark H1 Package Code URP Outline Cathode mark Mark 1 H1 2 1. Cathode 2. Anode HSU119 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Average forward current Peak rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRM VR IO I FM I FSM Tj Tstg *1 Value 85 80 100 300 4 125 –55 to +125 Unit V V mA mA A °C °C 1. Within 1µ s forward surge current.