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HSU276 - Silicon Schottky Barrier Diode for Mixer

Key Features

  • High forward current, Low capacitance.
  • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU276 Laser Mark 3 Package Code URP Outline Cathode mark Mark 1 3 2 1. Cathode 2. Anode HSU276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125.
  • 55 to +125 Unit V mA °C °C Electrica.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev 6 Jul. 1996 Features • High forward current, Low capacitance. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU276 Laser Mark 3 Package Code URP Outline Cathode mark Mark 1 3 2 1. Cathode 2. Anode HSU276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability Note: *1 Symbol VR IR IF C — Min 3 — 35 — 30 Typ — — — — — Max — 50 — 0.