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HSU227 - Silicon Schottky Barrier Diode for High Speed Switching

Key Features

  • Low capacitance. (C=3.0pF max).
  • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU227 Laser Mark S3 Package Code URP Outline Cathode mark Mark 1 S3 2 1. Cathode 2. Anode HSU227 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRRM Io Value 25.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSU227 Silicon Schottky Barrier Diode for High Speed Switching ADE-208-779(Z) Rev 0 Mar. 1999 Features • Low capacitance. (C=3.0pF max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU227 Laser Mark S3 Package Code URP Outline Cathode mark Mark 1 S3 2 1. Cathode 2. Anode HSU227 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRRM Io Value 25 50 *2 Unit V mA mA °C °C IFSM Tj 200 125 -55 to +125 Tstg 1. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Symbol VF IR C Min — — — Typ 0.