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HSU88 - Silicon Schottky Barrier Diode for Various Detector/ Mixer

Key Features

  • Low capacitance. (C=0.8pF max).
  • Low forward voltage.
  • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU88 Laser Mark 9 Package Code URP Outline Cathode mark Mark 1 9 2 1. Cathode 2. Anode HSU88 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125 -55 to +125 Unit V mA °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G(Z) Rev 7 Dec 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU88 Laser Mark 9 Package Code URP Outline Cathode mark Mark 1 9 2 1. Cathode 2. Anode HSU88 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125 -55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current I R1 I R2 Capacitance ESD-Capability *1 Min 350 500    30 Typ       Max 420 580 0.2 10 0.