HSU88
HSU88 is Silicon Schottky Barrier Diode for Various Detector/ Mixer manufactured by Hitachi Semiconductor.
Features
- Low capacitance. (C=0.8p F max)
- Low forward voltage.
- Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information
Type No. HSU88 Laser Mark 9 Package Code URP
Outline
Cathode mark Mark 1
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125 -55 to +125 Unit V m A °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Symbol VF1 VF2 Reverse current I R1 I R2 Capacitance ESD-Capability
- 1
Min 350 500 30
Typ
Max 420 580 0.2 10 0.8
Unit m V µA
Test Condition I F = 1 m A I F = 10 m A VR = 2V VR = 10V
C p F V
VR = 0V, f = 1 MHz C = 200p F , Both forward and reverse direction 1 pulse.
Notes 1. Failure criterion ; IR ≥ 400n A at VR =2 V
Main Characteristic
-2
-6
(A)
-3
Reverse current I R (A)
-7
Ta= 75°C
Forward current...
