HVD131 - Silicon Epitaxial Planar Pin Diode for High Frequency Switching
Hitachi Semiconductor (now Renesas)
Key Features
Low capacitance. (C=0.8pF max).
Low forward resistance. (rf=1.0 Ω max).
Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information
Type No. HVD131 Laser Mark 1 Package Code SFP
Outline
Cathode mark Mark 1
1
2 1. Cathode 2. Anode
HVD131
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 15.
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HVD131
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-832 (Z) Rev 0 Nov. 1999 Features
• Low capacitance.(C=0.8pF max) • Low forward resistance. (rf=1.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD131 Laser Mark 1 Package Code SFP
Outline
Cathode mark Mark 1
1
2 1. Cathode 2. Anode
HVD131
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min — — — — Typ — — — — Max 0.1 1.0 0.8 1.
HVD131 Datasheet
