HVD132 - Silicon Epitaxial Planar Pin Diode for High Frequency Switching
Hitachi Semiconductor (now Renesas)
Key Features
Low capacitance. (C=0.5pF max).
Low forward resistance. (rf=2.0 Ω max).
Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information
Type No. HVD132 Laser Mark 2 Package Code SFP
Outline
Cathode mark Mark 1
2
2 1. Cathode 2. Anode
HVD132
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 15.
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HVD132
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-830 (Z) Rev 0 Nov. 1999 Features
• Low capacitance.(C=0.5pF max) • Low forward resistance. (rf=2.0 Ω max) • Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD132 Laser Mark 2 Package Code SFP
Outline
Cathode mark Mark 1
2
2 1. Cathode 2. Anode
HVD132
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance Note: Symbol IR VF C rf Min — — — — Typ — — — — Max 0.1 1.0 0.
HVD132 Datasheet
