HVU187 - Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator
Features
Low forward resistance. (rf=5.5 Ω max).
Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information
Type No. HVU187 Laser Mark D Package Code URP
Outline
Cathode mark Mark 1
D
2 1. Cathode 2. Anode
HVU187
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 60 50 100 125 -55 to +125 Unit V mA mW °C °C
Electrical Characteristics (T.
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HVU187
Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator
ADE-208-054D(Z) Rev 4 Nov. 1998 Features
• Low forward resistance. (rf=5.5 Ω max) • Ultra small R esin P ackage (URP) is suitable for surface mount design.
Ordering Information
Type No. HVU187 Laser Mark D Package Code URP
Outline
Cathode mark Mark 1
D
2 1. Cathode 2. Anode
HVU187
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 60 50 100 125 -55 to +125 Unit V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability
*1
Symbol IR VF C rf —
Min — — — 3.5 200
Typ — — — — —
Max 100 1.0 2.4 5.