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HVU187 - Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator

Features

  • Low forward resistance. (rf=5.5 Ω max).
  • Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information Type No. HVU187 Laser Mark D Package Code URP Outline Cathode mark Mark 1 D 2 1. Cathode 2. Anode HVU187 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 60 50 100 125 -55 to +125 Unit V mA mW °C °C Electrical Characteristics (T.

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Datasheet Details

Part number HVU187
Manufacturer Hitachi Semiconductor
File Size 28.99 KB
Description Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator
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HVU187 Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator ADE-208-054D(Z) Rev 4 Nov. 1998 Features • Low forward resistance. (rf=5.5 Ω max) • Ultra small R esin P ackage (URP) is suitable for surface mount design. Ordering Information Type No. HVU187 Laser Mark D Package Code URP Outline Cathode mark Mark 1 D 2 1. Cathode 2. Anode HVU187 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 60 50 100 125 -55 to +125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf — Min — — — 3.5 200 Typ — — — — — Max 100 1.0 2.4 5.
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