PF01410A - MOS FET Power Amplifier Module for GSM Handy Phone

Datasheet Summary

Features

4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50.
30 to +100.
30 to +100 4 Unit V A V mW °C °C.

Hitachi Semiconductor

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Datasheet Details

Part number	PF01410A
Manufacturer	Hitachi Semiconductor
File Size	25.37 KB
Description	MOS FET Power Amplifier Module for GSM Handy Phone
Datasheet	PF01410A Datasheet
Additional preview pages of the PF01410A datasheet.

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Full PDF Text Transcription

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PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.

Published: Mar 22, 2005 |