Datasheet Details
| Part number | PF01410A |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 25.37 KB |
| Description | MOS FET Power Amplifier Module for GSM Handy Phone |
| Datasheet |
 PF01410A Datasheet
|
|
|
Key Features
- 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50.
- 30 to +100.
- 30 to +100 4 Unit V A V mW °C °C.