• Part: PF01411B
  • Description: MOS FET Power Amplifier Module for E-GSM Handy Phone
  • Manufacturer: Hitachi Semiconductor
  • Size: 26.55 KB
Download PF01411B Datasheet PDF
Hitachi Semiconductor
PF01411B
PF01411B is MOS FET Power Amplifier Module for E-GSM Handy Phone manufactured by Hitachi Semiconductor.
MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov. 1997 Application - For E-GSM class4 880 to 915 MHz - For 3.5 V nominal battery use Features - - - - High gain 3stage amplifier : 0 d Bm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 d Bm Wide gain control range : 70 d B Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G:...