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PF01411B - MOS FET Power Amplifier Module for E-GSM Handy Phone

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Hitachi Semiconductor

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PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – PF01411B

Datasheet Details

Part number	PF01411B
Manufacturer	Hitachi Semiconductor
File Size	26.55 KB
Description	MOS FET Power Amplifier Module for E-GSM Handy Phone
Datasheet	PF01411B Datasheet
Additional preview pages of the PF01411B datasheet.

Product details

Features

High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10.

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Published: Mar 22, 2005 |