Datasheet4U.com

PF01412A - MOS FET Power Amplifier Module for E-GSM Handy Phone

Product Overview

Hitachi Semiconductor

📥 Download Datasheet

PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – PF01412A

Datasheet Details

Part number	PF01412A
Manufacturer	Hitachi Semiconductor
File Size	25.87 KB
Description	MOS FET Power Amplifier Module for E-GSM Handy Phone
Datasheet	PF01412A Datasheet
Additional preview pages of the PF01412A datasheet.

Product details

Features

High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement.
RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10.

📁 Similar Datasheet

PF0100 - 14-channel configurable power management (NXP)
PF0100Z - 14-channel configurable power management (NXP)
PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
PF0027 - MOS FET Power Amplifier Module (Renesas Technology)
PF0031 - MOS FET Power Amplifier Module (Hitachi)
PF0200 - 12-channel configurable power management (NXP)
PF0224TE6 - EMI Filtering TVS (KEC)
PF03 - 40-860 MHz. Ultra-linear Opto Receiver Amplifier (Tyco Electronics)

Other Datasheets by Hitachi Semiconductor

PF01410A - MOS FET Power Amplifier Module for GSM Handy Phone
PF01411A - MOS FET Power Amplifier Module for E-GSM Handy Phone
PF01411B - MOS FET Power Amplifier Module for E-GSM Handy Phone
PF0121 - MOS FET Power Amplifier Module for GSM Mobile Phone
PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone
PF0030 - MOS FET Power Amplifier

Published: Mar 22, 2005 |