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PF01412A Datasheet

Mos Fet Power Amplifier Module For E-gsm Handy Phone

Manufacturer: Hitachi Semiconductor (now Renesas)

PF01412A Overview

PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B (Z) 3rd Edition February 1997 Application For GSM class4 890 to 915 MHz For 5.5V nominal DC/DC converter use.

PF01412A Key Features

  • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3

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