• Part: PF01412A
  • Description: MOS FET Power Amplifier Module for E-GSM Handy Phone
  • Manufacturer: Hitachi Semiconductor
  • Size: 25.87 KB
Download PF01412A Datasheet PDF
Hitachi Semiconductor
PF01412A
PF01412A is MOS FET Power Amplifier Module for E-GSM Handy Phone manufactured by Hitachi Semiconductor.
MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B (Z) 3rd Edition February 1997 Application - For GSM class4 890 to 915 MHz - For 5.5V nominal DC/DC converter use Features - - - - High gain 3stage amplifier : 0 d Bm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 d B Typ Pin Arrangement - RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G:...