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PF0210 - MOS FET Power Amplifier Module for ADC Mobile Phone

Datasheet Summary

Features

  • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK.
  • Low input power: 0 dBm ave. Typ for π /4-DQPSK.
  • Simple bias circuit.
  • High speed switching: 8 µs Typ Pin Arrangement.
  • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 µF (Ceramic chip capacitor) C3 = 330 µF (Aluminum Electrolyt.

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Datasheet preview – PF0210

Datasheet Details

Part number PF0210
Manufacturer Hitachi Semiconductor
File Size 47.89 KB
Description MOS FET Power Amplifier Module for ADC Mobile Phone
Datasheet download datasheet PF0210 Datasheet
Additional preview pages of the PF0210 datasheet.

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Full PDF Text Transcription

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PF0210 MOS FET Power Amplifier Module for ADC Mobile Phone ADE-208-102E (Z) Preliminary 6th Edition July 1996 Features • High efficiency: 34% Typ for CW 30% Typ for π/4-DQPSK • Low input power: 0 dBm ave. Typ for π /4-DQPSK • Simple bias circuit • High speed switching: 8 µs Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0210 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 C1 FB1 C3 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.
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