PF0121 Datasheet | Hitachi Semiconductor

MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features - Low power control current: 0.9 m A Typ - High speed switching: 1.5 µsec Typ - Wide power control range: 100 d B Typ Pin Arrangement - RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC Pout C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 Ω (Microstrip...