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PF0121 - MOS FET Power Amplifier Module for GSM Mobile Phone

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Hitachi Semiconductor

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PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – PF0121

Datasheet Details

Part number	PF0121
Manufacturer	Hitachi Semiconductor
File Size	51.97 KB
Description	MOS FET Power Amplifier Module for GSM Mobile Phone
Datasheet	PF0121 Datasheet
Additional preview pages of the PF0121 datasheet.

Product details

Features

Low power control current: 0.9 mA Typ.
High speed switching: 1.5 µsec Typ.
Wide power control range: 100 dB Typ Pin Arrangement.
RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture:.

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Published: Mar 22, 2005 |