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PF0121 - MOS FET Power Amplifier Module for GSM Mobile Phone

Datasheet Summary

Features

  • Low power control current: 0.9 mA Typ.
  • High speed switching: 1.5 µsec Typ.
  • Wide power control range: 100 dB Typ Pin Arrangement.
  • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture:.

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Datasheet Details

Part number PF0121
Manufacturer Hitachi Semiconductor
File Size 51.97 KB
Description MOS FET Power Amplifier Module for GSM Mobile Phone
Datasheet download datasheet PF0121 Datasheet
Additional preview pages of the PF0121 datasheet.

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Full PDF Text Transcription

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PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features • Low power control current: 0.9 mA Typ • High speed switching: 1.5 µsec Typ • Wide power control range: 100 dB Typ Pin Arrangement • RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.
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