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PF08103A - MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

Datasheet Summary

Features

  • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800 PF08103A Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Con.

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Datasheet Details

Part number PF08103A
Manufacturer Hitachi Semiconductor
File Size 42.40 KB
Description MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
Datasheet download datasheet PF08103A Datasheet
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PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-685B (Z) 3rd Edition Apr. 1999 Application • Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz). • For 4.8 V nominal battery use Features • • • • • • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800 PF08103A Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Control (H: 2 V Min, L: 0.
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