PF08103A Datasheet | Hitachi Semiconductor

Features - - - - - - 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 d Bm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 48% Typ at 34.5 d Bm for E-GSM 36% Typ at 31.5 d Bm for DCS1800 Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Control (H: 2 V Min, L: 0.3 V Max) Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V Current of Control Pin Control Pin VCTL Equivalent Input Circuit Control Current 160 µA Max at 3 V VCTL 80 µA Max at 3 V Vapc 3 m A Max at 3 V Internal Diagram and External Circuit 4 Pout GSM 8 Pin 5 Pout DCS Z1 Bias circuit 6 Vdd1 VCTL C3 C1 FB Pin Vdd1 VCTL FB VCTL 1 VCTL C5 2 Vapc C6 7 Vdd2 C7 C2 FB Vapc Vdd2 Pout DCS Pout GSM C4 3 Z2 Z3 Note: C1 = C2 = 4.7 µF TANTALUM ELECTROLYTE C3 = C4 = 0.01 µF CERAMIC CHIP C5 = C6 = C7 = 1000 p F CERAMIC CHIP FB = FERRITE BEAD BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = Z3 = 50 Ω MICRO STRIP LINE Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current Symbol VDD I DD GSM I DD DCS VCTL , VCTL voltage Vapc voltage Input power Operating case temperature Storage temperature Output power VCTL, VCTL Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8.5 3 3 4 4 10 - 30 to +100 - 30 to +100 5 3 Unit V A A V V d Bm °C °C W W Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz). Electrical Characteristics for DC (Tc = 25°C) Item Drain cutoff current Symbol Ids Min - - Typ - - Max 20 300 Unit µA µA Test Condition Vdd = 6.0 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V Vdd = 8.5 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V, Tc = - 20 to +80°C VCTL = 3.0 V VCTL = 3.0 V VCTL control current VCTL control current I CTL I CTL - - 100 50 160 80 µA...