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PF08103A - MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone

Product Overview

Hitachi Semiconductor

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PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – PF08103A

Datasheet Details

Part number	PF08103A
Manufacturer	Hitachi Semiconductor
File Size	42.40 KB
Description	MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
Datasheet	PF08103A Datasheet
Additional preview pages of the PF08103A datasheet.

Product details

Features

1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800 PF08103A Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Con.

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Published: Mar 22, 2005 |