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PF08103B - MOS FET Power Amplifier

Datasheet Summary

Features

  • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 45% Typ at 35.0 dBm for E-GSM 35% Typ at 32.5 dBm for DCS1800 PF08103B Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL V.

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Datasheet Details

Part number PF08103B
Manufacturer Hitachi Semiconductor
File Size 34.51 KB
Description MOS FET Power Amplifier
Datasheet download datasheet PF08103B Datasheet
Additional preview pages of the PF08103B datasheet.

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Full PDF Text Transcription

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PF08103B MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone ADE-208-785C (Z) 4th Edition May 1999 Application • Dual band amplifier for E-GSM900 (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz). • For 3.5 V nominal battery use Features • • • • • • 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 45% Typ at 35.0 dBm for E-GSM 35% Typ at 32.
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