PF08103B
PF08103B is MOS FET Power Amplifier manufactured by Hitachi Semiconductor.
Features
- -
- -
- - 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 d Bm input for GSM, +4.5 d Bm input for DCS Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 45% Typ at 35.0 d Bm for E-GSM 35% Typ at 32.5 d Bm for DCS1800
Internal Circuit Block Diagram
Vdd1 Vdd2
Pout GSM Pin Pout DCS
Bias circuit
VCTL
VCTL
Vapc
Band Select and Power Control
Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V
Current of Control Pin
Control Pin VCTL Equivalent Input Circuit Control Current 2 µA Max
VCTL
1 µA Max
Vapc
3 m A Max at 2.2 V
Note: Control current is preliminary value.
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current Symbol VDD I DD GSM I DD DCS VCTL , VCTL voltage Vapc voltage Input power Operating case temperature Storage temperature Output power VCTL, VCTL Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8.5 3.5 2 4 4 10
- 30 to +100
- 30 to +100 5 3 Unit V A A V V d Bm °C °C W W
Note: The maximum ratings shall be valid over both the E-GSM-band (880-915 MHz), and the DCS-band (1710-1785 MHz).
Electrical Characteristics for DC (Tc = 25°C)
Item Drain cutoff current Symbol Ids Min Typ Max 20 300 Unit µA µA Test Condition VDD = 4.7 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V VDD = 4.7 V, Vapc = 0 V, VCTL = 0 V, VCTL = 0 V, Tc =
- 20 to +80° C Vapc = 2.2 V VCTL = 3 V VCTL = 3 V
Vapc control current VCTL control current VCTL control current
Iapc I CTL I CTL
3 2 1 m A µA µA
Electrical Characteristics for GSM900 mode (Tc = 25°C)
Test conditions unless otherwise noted: f = 880 to 915MHz, V DD1 = V DD2 = 3.5V, Pin = +1d Bm, VCTL = 2.0V, VCTL = 0.1V, Rg = Rl = 50Ω , Tc = 25°C, Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.
Item Frequency range Control voltage range Total efficiency 2nd harmonic...