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PF08103B - MOS FET Power Amplifier

Product Overview

Hitachi Semiconductor

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PF08103B MOS FET Power Amplifier by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – PF08103B

Datasheet Details

Part number	PF08103B
Manufacturer	Hitachi Semiconductor
File Size	34.51 KB
Description	MOS FET Power Amplifier
Datasheet	PF08103B Datasheet
Additional preview pages of the PF08103B datasheet.

Product details

Features

1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 45% Typ at 35.0 dBm for E-GSM 35% Typ at 32.5 dBm for DCS1800 PF08103B Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL V.

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Published: Mar 22, 2005 |