Datasheet4U.com

PF08107B - MOS FET Power Amplifier

Product Overview

Hitachi Semiconductor

📥 Download Datasheet

PF08107B MOS FET Power Amplifier by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – PF08107B

Datasheet Details

Part number	PF08107B
Manufacturer	Hitachi Semiconductor
File Size	168.37 KB
Description	MOS FET Power Amplifier
Datasheet	PF08107B Datasheet
Additional preview pages of the PF08107B datasheet.

Product details

Features

2 in / 2 out dual band amplifier.
Simple external circuit including output matching circuit.
One power control pin with one band switch.
High gain 3stage amplifier : 0 dBm input Typ.
Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ.
High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.0 dBm for DCS1800 Pin Arrangement.
RF-K-8 8 7G65 G G 12 G 34 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8.

📁 Similar Datasheet

PF08109B - MOS FET Power Amplifier Module (Hitachi)
PF08109B-TB - Micro Module Specifications (Samsung Electronics)
PF08114B - MOS FET Power Amplifier Module (Renesas)
PF08122B - MOS FET Power Amplifier Module (Renesas)
PF08127B - MOS FET Power Amplifier Module (Renesas)
PF08134B - MOS FET Power Amplifier Module (Renesas Technology)
PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
PF0027 - MOS FET Power Amplifier Module (Renesas Technology)

Other Datasheets by Hitachi Semiconductor

PF08103A - MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
PF08103B - MOS FET Power Amplifier
PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone
PF0030 - MOS FET Power Amplifier
PF0032 - MOS FET Power Amplifier
PF0121 - MOS FET Power Amplifier Module for GSM Mobile Phone

Published: Mar 6, 2016 |