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PF08107B - MOS FET Power Amplifier

Datasheet Summary

Features

  • 2 in / 2 out dual band amplifier.
  • Simple external circuit including output matching circuit.
  • One power control pin with one band switch.
  • High gain 3stage amplifier : 0 dBm input Typ.
  • Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ.
  • High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.0 dBm for DCS1800 Pin Arrangement.
  • RF-K-8 8 7G65 G G 12 G 34 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8.

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Datasheet preview – PF08107B

Datasheet Details

Part number PF08107B
Manufacturer Hitachi Semiconductor
File Size 168.37 KB
Description MOS FET Power Amplifier
Datasheet download datasheet PF08107B Datasheet
Additional preview pages of the PF08107B datasheet.

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Full PDF Text Transcription

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PF08107B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-787F (Z) 7th Edition Feb. 2001 Application • Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). • For 3.5 V nominal operation Features • 2 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • One power control pin with one band switch • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ • High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.
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