Datasheet4U Logo Datasheet4U.com

PF08107B - MOS FET Power Amplifier

Key Features

  • 2 in / 2 out dual band amplifier.
  • Simple external circuit including output matching circuit.
  • One power control pin with one band switch.
  • High gain 3stage amplifier : 0 dBm input Typ.
  • Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ.
  • High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.0 dBm for DCS1800 Pin Arrangement.
  • RF-K-8 8 7G65 G G 12 G 34 1: Pin GSM 2: Vapc 3: Vdd1 4: Pout GSM 5: Pout DCS 6: Vdd2 7: Vctl 8.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PF08109B MOS FET Power Amplifier Module Hitachi
PF08109B-TB Micro Module Specifications Samsung Electronics
PF08114B MOS FET Power Amplifier Module Renesas
PF08122B MOS FET Power Amplifier Module Renesas
PF08127B MOS FET Power Amplifier Module Renesas

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
PF08103A MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
PF08103B MOS FET Power Amplifier
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone
PF0030 MOS FET Power Amplifier
PF0032 MOS FET Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PF08107B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-787F (Z) 7th Edition Feb. 2001 Application • Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz). • For 3.5 V nominal operation Features • 2 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • One power control pin with one band switch • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ • High efficiency : 50 % Typ at 35.0 dBm for E-GSM 43 % Typ at 32.