Hitachi 1SS106
Silicon Schottky Barrier Diode
| Part No. | 1SS106 |
|---|---|
| Datasheet | 1SS106 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Detection efficiency is very good.● Small temperature coefficient.
● High reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band White Outline Mark H ADE-208-153A (Z) Rev. 1 Oct. 1998 Package Code DO-35 H 1 2 2nd band Cathode band 1. Cathode 2. Anode 1SS106
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol V R I O Tj Tstg Value Unit 10 V 30 mA 125 °C –55 to +125 °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency Symbol Min Typ IF 4.5 — IR — — C — — η 70 — ESD-Capability *1 — 100 — Notes: 1. Failure criterion; IR ≥ 140µA at VR = 6V Max — 70 1.5 — — Unit mA µA pF % V Test Condition VF = 1V VR = 6V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL = 20pF C = 200pF, Both forward and reverse direction 1 pulse. Rev.1, Oct. 1998, page 2 of 5 Main Characteristic 10-1 10-2 Forward current I F (A) 10-3 10-4 10-5 0 0.4 0.8 1.2 1.6 2.0 Forward voltage V F (V) Fig.1 Forward current Vs.
