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1SS106 Datasheet PDF

Semtech Corporation 1SS106

SILICON SCHOTTKY BARRIER DIODE

Part No. 1SS106
Datasheet 1SS106 Download
Manufacturer
Semtech Corporation
Description SILICON SCHOTTKY BARRIER DIODE
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1SS106 datasheet page 1 preview

FEATURES

● Detection efficiency is very good.
● Small temperature coefficient.
● High reliability with glass seal.

ABSOLUTE MAXIMUM RATINGS

(Ta = 25 OC) Parameter Reverse Voltage Average Forward Current Junction Temperature Storage Temperature Range Max. 0.5 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. Black "ST" Brand XXX ST Max. 3.9 Min. 27.5 Glass Case DO-35 Dimensions in mm Symbol VR IO TJ Tstg Value 10 30 125 - 55 to + 125 Unit V mA OC OC

ELECTRICAL CHARACTERISTICS

at Ta = 25 OC Parameter Forward Current at VF = 1 V Reverse Current at VR = 6 V Capacitance at VR = 1 V, f = 1 MHz Rectifier Efficiency at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 pF ESD Capability 1) at C = 200 pF, both forward and reverse direction 1 pulse. 1) Failure criterion: IR ≥ 140 µA at VR = 6 V Symbol IF IR C η - Min. 4.5 70 100 Max. 70 1.5 - Unit mA µA pF % V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Co...