Renesas Electronics 1SS106
Silicon Schottky Barrier Diode
| Part No. | 1SS106 |
|---|---|
| Datasheet | 1SS106 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Detection efficiency is very good.● Small temperature coefficient.
● High reliability with glass seal.. Ordering Information Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Pin Arrangement H 12 2nd band Cathode band 1. Cathode 2. Anode Rev.2.00, Oct.23.2003, page 1 of 4 1SS106
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward current Reverse current Capacitance ESD-Capability *1 IF IR C — 4.5 — —— —— 100 — — mA VF = 1 V 70 µA VR = 6 V 1.5 pF VR = 1 V, f = 1 MHz — V C = 200 pF, Both forward and reverse direction 1 pulse. Note: 1. Failure criterion; IR ≥ 140 µA at VR = 6 V Rev.2.00, Oct.23.2003, page 2 of 4 1SS106 Main Characteristics 10–1 10–2 Forward current IF (A) 10–3 10–4 10–5 0 0.4 0.8 1.2 1.6 2.0 Forward voltage VF (V) Fig.1 Forward current vs.
